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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP161N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP161N04TUG-E1-AY
NP161N04TUG-E2-AY
Note
Note
Pure Sn (Tin)
Tape 800 p/reel
TO-263-7pin (MP-25ZT) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
? Super low on-state resistance
R DS(on) = 1.35 m Ω TYP. / 1.8 m Ω MAX. (V GS = 10 V, I D = 80 A)
? High Current Rating
I D(DC) = ± 160 A
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
40
± 20
± 160
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 640
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
250
1.8
175
? 55 to + 175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
70
650
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch = 150 ° C, V DD = 25 V, R G = 25 Ω , V GS = 20 → 0 V, L = 100 μ H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
0.6
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19411EJ1V0DS00 (1st edition)
Date Published August 2008 NS
Printed in Japan
2008
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